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| Ordering number : ENN8325 2SK3618 2SK3618 Features * * * N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings 100 20 8 32 1 20 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate-to-Source Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4A ID=4A, VGS=10V ID=4A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 100 1 10 1.2 4 7 100 130 880 80 55 11.5 14 100 42 130 180 2.6 typ max Unit V A A V S m m pF pF pF ns ns ns ns Marking : K3618 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005PA MS IM TB-00001380 No.8325-1/4 2SK3618 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=50V, VGS=10V, ID=8A VDS=50V, VGS=10V, ID=8A VDS=50V, VGS=10V, ID=8A IS=8A, VGS=0V Ratings min typ 24 3.2 5.5 0.9 1.2 max Unit nC nC nC V Note) Although the protection diode is contained between gate and source, be careful of handling enough. Package Dimensions unit : mm 7518-004 6.5 5.0 2.3 1.5 Package Dimensions unit : mm 7003-004 6.5 5.0 2.3 0.5 4 4 7.0 1.5 0.5 5.5 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 to 0.2 1.2 0.6 2.5 0.85 0.7 5.5 7.0 0.85 0.5 1.2 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit VDD=50V 10V 0V VIN ID=4A RL=12.5 VIN PW=10s D.C.1% D VOUT G P.G 50 S 2SK3618 20 18 16 ID -- VDS 8V 6V 25 ID -- VGS 25C 25 C Tc= 75 --25 C C VDS=10V 4V 20 Drain Current, ID -- A Drain Current, ID -- A 14 12 10 8 6 4 2 0 0 0.5 1.0 15 10 VGS=3V 5 0 1.5 2.0 2.5 3.0 IT07979 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V 25 C Tc= -- V 10 75 IT07022 No.8325-2/4 C 2SK3618 180 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- m 300 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m Tc=25C ID=4A 160 250 200 140 150 , 4A I D= =4V V GS 120 100 VG 4A, I D= 10 S= V 100 50 80 2 3 4 5 6 7 8 9 10 IT07980 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 5 yfs -- ID Case Temperature, Tc -- C 5 3 2 10 7 5 3 2 1.0 7 5 IT07981 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S VDS=10V 3 C 25 10 7 5 3 2 = Tc 5C --2 0.1 7 5 3 2 1.0 0.01 2 3 5 7 1.0 2 3 5 7 10 2 3 0 0.3 0.6 0.9 1.2 1.5 IT07027 Drain Current, ID -- A 3 2 IT07026 3 SW Time -- ID td (off) Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=50V VGS=10V Ciss, Coss, Crss -- pF 2 Switching Time, SW Time -- ns 100 7 5 3 2 1000 7 5 3 2 tf tr 10 7 5 3 0.1 td(on) 100 7 5 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 5 Tc=7 5 C 25C --25C Ciss 75 C Source Current, IS -- A 2 3 2 Coss Crss 10 15 20 25 30 IT07029 Drain Current, ID -- A 10 9 IT07028 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Drain-to-Source Voltage, VDS -- V VGS -- Qg ASO IDP=32A ID=8A D C Gate-to-Source Voltage, VGS -- V VDS=50V ID=8A Drain Current, ID -- A 10 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 IT07982 <10s 10 0 s s 1 10 0ms 1ms 0m op s er at io n (T c= 25 C Operation in this area ) is limited by RDS(on). 0.01 0.01 2 3 5 7 0.1 Tc=25C Single pulse 23 5 7 1.0 23 5 7 10 23 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7100 2 IT07983 No.8325-3/4 2SK3618 1.25 PD -- Ta Allowable Power Dissipation, PD -- W 25 PD -- Tc Allowable Power Dissipation, PD -- W 1.00 20 0.75 15 0.50 10 0.25 5 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT07984 Case Temperature, Tc -- C IT07033 Note on usage : Since the 2SK3618 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8325-4/4 |
Price & Availability of 2SK3618
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